*Public Authority for Applied Education & Training (PAAET), College of Technological Studies, Electronics Engineering department, P.O. Box 42325. Shuwaikh 70654, Kuwait.
**Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK.
E-mail: alzanki@me.com, talal@cfw.kuniv.edu, alzankit@yahoo.com,
th.alzanki@paaet.edu.kw
ABSTRACT
The effect of ion dose on the atomic profiles and sheet resistance has been investigated for silicon implanted with 2keV and 5keV antimony ions at doses between 1 X 1014 to 1 X 1015 cm-2. Atomic profiles are determined using secondary ion mass spectroscopy (SIMS) and the sheet resistance values obtained using the van der Pauw technique. The junction depth was measured, assuming a background doping concentration of 1 X 1018 cm-3 in a modern complementary metal-oxide semiconductor (CMOS) device, and is in the range of 15-20 nm. The lowest sheet resistances (850 ohm/square) were obtained after annealing at 7000C showing that optimum electrical characteristics of shallow junction and low sheet resistance require a much lower thermal budget than current processes used by industry.
Keywords: Differential Hall Effect; Rapid thermal annealing; Antimony; shallow junction formation; Silicon.