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Volume :31 Issue : 2 2004      Add To Cart                                                                    Download

Optimization of the triple junction In0.5Ga0.5P/GaAs/Ge monolithic tandem cell aimed for terrestrial applications using an experimentally verified analytical model

Auther : M.Y. GHANNAM#,^, A.S. ALOMAR#, N. POSTHUMA*, G. FLAMMAND* AND J. POORTMANS*

# EE Dept., Kuwait University, P.O. Box 5969, Safat 13060, Kuwait, Fax:965-4817451 , email : mghannam@eng.kuniv.edu.kw.* IMEC vzw, Kapeldreef 75, B-3001, Leuven, Belgium.^Present address: American University in Cairo, P.O. Box 2511, 11511, Cairo Egypt.

ABSTRACT

 A two-terminal monolithic In0.5Ga0.5P/GaAs/Ge triple junction tandem cell is studied using an analytical model that takes into consideration doping dependent carrier transport parameters and surface recombination. Cell voltage degradation due to band-gap narrowing in the heavily doped regions is partially compensated by a boost in the cell photocurrent. Comparison with experimental performance of individual sub-cells confirms the accuracy of the analysis. The three sub-cells are optimized for joint operation within the triple junction tandem cell and a maximum efficiency of 39% is estimated for the optimum tandem cell operating under AM1.5G solar spectrum neglecting technology-dependent losses. Best experimental cell achieved so far still suffers from recombination at the back interfaces of the top and middle sub-cells. Under concentrated AM1.5D illumination, the best experimental tandem cell suffers from voltage degradation due to recombination at the emitter surface of the middle and bottom cells, though its maximum possible photocurrent has almost been reached.

 Keywords: GaAs solar cells – Ge solar cells - InGaP solar cells - Multijunction solar cells - Tandem solar cells.

 

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